Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
Identifieur interne : 004E71 ( Main/Repository ); précédent : 004E70; suivant : 004E72Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
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Abstract
This paper reports on the optical and structural properties of strained type-I Ga1-xInxSb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga1-xInxSb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 °C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells</title><author><name sortKey="Wagener, Viera" uniqKey="Wagener V">Viera Wagener</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth 6031</wicri:noRegion></affiliation></author><author><name sortKey="Olivier, E J" uniqKey="Olivier E">E. J. Olivier</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth 6031</wicri:noRegion></affiliation></author><author><name sortKey="Botha, J R" uniqKey="Botha J">J. R. Botha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth 6031</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0069953</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0069953 INIST</idno><idno type="RBID">Pascal:10-0069953</idno><idno type="wicri:Area/Main/Corpus">004A57</idno><idno type="wicri:Area/Main/Repository">004E71</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term><term>Gallium Indium Antimonides Mixed</term><term>Gallium antimonides</term><term>Growth rate</term><term>MOVPE method</term><term>Photoluminescence</term><term>Quantum wells</term><term>Thickness</term><term>Transmission electron microscopy</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term><term>Epitaxie phase vapeur</term><term>Photoluminescence</term><term>Microscopie électronique transmission</term><term>Composition chimique</term><term>Epaisseur</term><term>Taux croissance</term><term>Gallium Indium Antimoniure Mixte</term><term>Antimoniure de gallium</term><term>Puits quantique</term><term>GaSb</term><term>Ga1-xInxSb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reports on the optical and structural properties of strained type-I Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga<sub>1-x</sub>In<sub>x</sub>Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 °C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>404</s2></fA05><fA06><s2>23-24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25</s1></fA09><fA11 i1="01" i2="1"><s1>WAGENER (Viera)</s1></fA11><fA11 i1="02" i2="1"><s1>OLIVIER (E. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOTHA (J. R.)</s1></fA11><fA12 i1="01" i2="1"><s1>BAGRAEV (Nikolay T.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>EMTSEV (Vadim V.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ESTREICHER (Stefan K.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Physics Department, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Ioffe Institute</s1><s2>St. Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>Texas Tech University</s1><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA20><s1>5167-5169</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000171516491830</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0069953</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reports on the optical and structural properties of strained type-I Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga<sub>1-x</sub>In<sub>x</sub>Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. 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